Buen día, alguien sabe que riesgo hay al subir unas memorias hyperx ddr3 (khx1333c9d3k2/2gb, dos kits, 4 modulos de 1 gb)
de su velocidad original (1333mhz) a 1600 mhz tomando en cuenta mi hardware, el procesador tene un overlock estable con su voltaje stock.
Tambien Quisiera sugerencias para manejar las latencias y el voltaje a dicha frecuancia sin peligro de quemarlas gracias.
Adjunto hardware y datos de las memorias:
Core 2 Duo E8400 @3.6 ghz
Termaltake Frio
Gigabyte EP-45T-UD3P
4 X 1 GB Kingston Hyperx 1333 mhz
ATI Radeon msi hd4850
Cooler Master Elite Power 460w
WD Caviar 500 GB
Gabinete xg Titanium 5fans
-----------------------------------------------------------------------------
Memory module specification:
KHX1333C9D3K2/2G
2GB (1GB 128M x 64-Bit x 2 pcs.) DDR3-1333MHz
CL9 240-Pin DIMM Kit
DESCRIPTION:
Kingston's KHX1333C9D3K2/2G is a kit of two 128M x 64-bit 1GB (1024MB) DDR3-1333MHz CL9 SDRAM
(Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module. Total kit
capacity is 2GB. Each module kit has been tested to run at DDR3-1333MHz at a low latency timing of 9-9-9 at 1.6V.
The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as
follows:
FEATURES:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.080 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
de su velocidad original (1333mhz) a 1600 mhz tomando en cuenta mi hardware, el procesador tene un overlock estable con su voltaje stock.
Tambien Quisiera sugerencias para manejar las latencias y el voltaje a dicha frecuancia sin peligro de quemarlas gracias.
Adjunto hardware y datos de las memorias:
Core 2 Duo E8400 @3.6 ghz
Termaltake Frio
Gigabyte EP-45T-UD3P
4 X 1 GB Kingston Hyperx 1333 mhz
ATI Radeon msi hd4850
Cooler Master Elite Power 460w
WD Caviar 500 GB
Gabinete xg Titanium 5fans
-----------------------------------------------------------------------------
Memory module specification:
KHX1333C9D3K2/2G
2GB (1GB 128M x 64-Bit x 2 pcs.) DDR3-1333MHz
CL9 240-Pin DIMM Kit
DESCRIPTION:
Kingston's KHX1333C9D3K2/2G is a kit of two 128M x 64-bit 1GB (1024MB) DDR3-1333MHz CL9 SDRAM
(Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module. Total kit
capacity is 2GB. Each module kit has been tested to run at DDR3-1333MHz at a low latency timing of 9-9-9 at 1.6V.
The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as
follows:
FEATURES:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.080 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C